Symbolic description in the technical parameters of the thyristor for induction furnace

VDRM: off-state repeat peak piezoelectric

VRRM: reverse repeat peak voltage

VDSM: Off-state does not repeat peak voltage

VRSM: Reverse peak voltage is not repeated

VTM: On-state peak voltage

VTO: On-state threshold voltage

VISO: module insulation voltage

VGT: gate trigger voltage

IT (AV): On-state average current

IF (AV): positive average current

IDRM: Off-state repeat peak current

IRRM: Reverse Repeated Peak Current

ITRMS: On-state current RMS

ITM: On-state peak current

ITSM: Forward a non-repetitive surge current (peak)

IGT: Gate trigger current

IH: Maintain current

I2t: current squared time product

Tq: turn off time

Trr: reverse recovery time

THS: radiator temperature

Tj: working junction temperature

Tjm: rated junction temperature

Tg: ambient junction temperature

Dv/dt: critical rate of critical state of off-state voltage

Di/dt: critical rate of on-state current

Rt: On-state slope resistance

Rth(j-hs): thermal impedance (junction to heat sink)

Rth(j-C): Thermal impedance (junction to component package)

Qr: reverse recovery charge

L*p: light trigger sensitivity

One-way thyristor components:

On-state average current IT: In a circuit with a single-phase power frequency sinusoidal half-wave of a resistive load and a conduction angle of not less than 170 degrees at an ambient temperature of +40 ° C and a specified cooling condition, when the junction temperature is stable, The maximum on-state average current allowed when the rated junction temperature is exceeded.

The off-state does not repeat the peak voltage VDSM: the off-state peak voltage at the sharp bend of the forward volt-ampere characteristic curve when the gate is open.

The off-state repetition peak voltage VDRM is 90% of the peak voltage of the off-state.

The off-state does not repeat the average current IDS: When the gate is open, the average leakage current at the peak voltage is not repeated at the rated junction temperature.

The off-state repeat average current IDR: corresponds to the average leakage current at the off-state repeated peak voltage.

Gate Trigger Current IGT: The minimum gate DC current necessary to fully turn the component on at 6 VDC when the main voltage is at room temperature.

Gate trigger voltage VGT: Gate DC voltage corresponding to the gate trigger current.

The critical rate of rise of the off-state voltage, dv/dt, is the lowest voltage rise rate at which the component transitions from the off state to the on state at the rated junction temperature and gate open.

Two-way thyristor components:

On-state current IT: In a single-phase power frequency sinusoidal half-wave circuit with resistive load at ambient temperature of +40 ° C and specified cooling conditions, the maximum allowed when the junction temperature is stable and does not exceed the rated junction temperature The on-state current RMS value.

Switching current critical drop rate (di/dt)c: The maximum on-state current drop rate allowed when the component transitions from an on-state to the opposite direction.

Gate Trigger Current IGT: The minimum gate DC current required to fully open the component when the main voltage is 12 VDC at room temperature.

Fast thyristor components:

Gate control turn-on time tgt: The time required for the main voltage to drop to a predetermined low value from a predetermined point on the leading edge of the gate pulse when the device is turned off from the off state to the on state at a predetermined gate pulse current at room temperature.

Circuit commutation turn-off time tq: The time interval from the moment the on-state current drops to zero, to the moment when the component begins to withstand the specified off-state voltage.

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